Physical Principles Involved in Transistor Action WITH Hole Injection in Germanium - Quantitative Studies and Filamentary Transistors WITH The Theory of P-n Junctions in Semiconductors and P-n Junction Transistors
New York: American Telephone and Telegraph Company 1949. First Edition. viii, 753 pages. 8vo. Dark blue/black cloth with replaced endpapers. Page edges speckled. Spine lettering "Bell System Technical Journal" | "Vol 28, 1949". Ex-libris "P. Caporale" with owner's name lettered on front panel and signature on front pastedown endpaper. This..... More
